作者: Naoki Matsumoto , Akira Koshiishi , Hidetoshi Hanaoka , Yohei Yamazawa , Manabu Sato
DOI:
关键词: Optoelectronics 、 Plasma channel 、 Plasma processing 、 Analytical chemistry 、 Auxiliary electrode 、 Electrode array 、 Plasma 、 Electrode 、 Plasma pencil 、 Materials science 、 Plasma etching
摘要: PROBLEM TO BE SOLVED: To provide a plasma processing system where sticking of deposits to the inner wall chamber or in-chamber member, such as an insulator, can be prevented. SOLUTION: The performing on wafer W by generating between upper electrode 34 and lower 16 comprises DC power supply 50 for applying voltage 34, that absolute value self-bias V dc surface becomes large enough attain predetermined sputtering effect surface, reduced is formed counter side application electrode, increasing thickness sheath in substrate processed irradiated with electrons generated vicinity potential controlled desired value, density increased, distribution uniform extent obtaining etching uniformity. COPYRIGHT: (C)2007,JPO&INPIT