Study of defects in Li-doped ZnO thin films

作者: M. Hjiri , M.S. Aida , O.M. Lemine , L. El Mir

DOI: 10.1016/J.MSSP.2018.09.010

关键词: DopingSpin coatingThin filmPhotoluminescenceSpectroscopyAnalytical chemistrySubstrate (electronics)Absorption edgeMaterials scienceWurtzite crystal structure

摘要: Abstract Li-doped ZnO films were deposited on glass substrate by sol-gel spin coating technique. In order to investigate the effect of Li doping thin properties, we have varied ratio in range 0–10%. The structural and optical properties samples been investigated X-ray diffraction UV–Vis spectroscopy. XRD analysis reveals that doped undoped an hexagonal Wurtzite structure. measurements indicate causes red shift absorption edge. Films photoluminescence spectra do not contain any defects peak related atoms. Being too close valence band, defect level is buried band tail width states; this explains difficulty its detection. However, doping, manifests through oxygen vacancy promotion detriment interstitial defect.

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