Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis
作者： Cheng-Chang Yu , Yu-Ting Hsu , Shao-Yi Lee , Wen-How Lan , Hsin-Hui Kuo
关键词: Thin film 、 Doping 、 Annealing (metallurgy) 、 Materials science 、 Conductivity 、 Activation energy 、 Scanning electron microscope 、 Analytical chemistry 、 Microstructure 、 Zinc 、 General Engineering 、 General Physics and Astronomy
摘要: Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the were investigated. X-ray diffraction (XRD) scanning electron microscopy (SEM) analyses performed. It was found that [B]/[Zn] ratio altered both microstructure concentration BZO films. film grain size reduced increasing ratio. highest Hall mobility 3.65 cm2 V-1 s-1 for undoped ZnO film, carrier 1.0×1019 cm-3 achieved as-deposited with = 1.5 at. %. Conductivity determined at different measurement temperatures shallow donors provided dominate conduction mechanism After 600 °C annealing, level reduction high activation energy 129±6 meV in characterized, spray-pyrolized eliminated.
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