Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process
作者： Radhouane Bel Hadj Tahar
DOI: 10.1016/J.JEURCERAMSOC.2004.08.028
关键词:
摘要: Abstract Aluminium-doped zinc oxide films were prepared through a non-alkoxide dip-coating technique from acetate and aluminium nitrate in alcoholic solution. The doping concentration the varied between 0 8 at.%. structural electrical properties of Al-doped (AZO) are investigated terms preparation conditions, such as Al content, precursor solution, firing annealing temperatures. crystal structure AZO is hexagonal wurtzite. In present study, we found that critical parameter determining quality aluminum concentration. crystallographic orientation depends on system used film regardless content heat-treatment temperature. resistivity 1 at.%-doped 2.5 × 10 −3 Ω cm mainly electronic mobility.
elsevier.com
sci-hub.se 参考文章(25)
Radhouane Bel Hadj Tahar, Noureddine Bel Hadj Tahar, Mechanism of carrier transport in aluminum-doped zinc oxide Journal of Applied Physics. ,vol. 92, pp. 4498- 4501 ,(2002) , 10.1063/1.1509083
Yasutaka Takahashi, Shinya Okada, Radhouane Bel Hadj Tahar, Ken Nakano, Takayuki Ban, Yutaka Ohya, Dip-coating of ITO films Journal of Non-crystalline Solids. ,vol. 218, pp. 129- 134 ,(1997) , 10.1016/S0022-3093(97)00199-3
B. A. Cook, J. L. Harringa, C. B. Vining, Electrical properties of Ga and ZnS doped ZnO prepared by mechanical alloying Journal of Applied Physics. ,vol. 83, pp. 5858- 5861 ,(1998) , 10.1063/1.367445
Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, Yasutaka Takahashi, ELECTRONIC TRANSPORT IN TIN-DOPED INDIUM OXIDE THIN FILMS PREPARED BY SOL-GEL TECHNIQUE Journal of Applied Physics. ,vol. 83, pp. 2139- 2141 ,(1998) , 10.1063/1.366949
Jin Ma, Feng Ji, Hong-lei Ma, Shu-ying Li, Preparation and properties of transparent conducting zinc oxide and aluminium-doped zinc oxide films prepared by evaporating method Solar Energy Materials and Solar Cells. ,vol. 60, pp. 341- 348 ,(2000) , 10.1016/S0927-0248(99)00076-8
Z.‐C. Jin, I. Hamberg, C. G. Granqvist, Optical properties of sputter-deposited ZnO:Al thin films Journal of Applied Physics. ,vol. 64, pp. 5117- 5131 ,(1988) , 10.1063/1.342419
R. Cebulla, R. Wendt, K. Ellmer, Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties Journal of Applied Physics. ,vol. 83, pp. 1087- 1095 ,(1998) , 10.1063/1.366798
Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, Yasutaka Takahashi, Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method Journal of Applied Physics. ,vol. 82, pp. 865- 870 ,(1997) , 10.1063/1.365786
B. Szyszka, S. Jäger, Optical and electrical properties of doped zinc oxide films prepared by ac reactive magnetron sputtering Journal of Non-crystalline Solids. ,vol. 218, pp. 74- 80 ,(1997) , 10.1016/S0022-3093(97)00288-3
M.S. Castro, C.M. Aldao, Effects of the Sintering Temperature on the Oxygen Adsorption in ZnO Ceramics Journal of the European Ceramic Society. ,vol. 19, pp. 511- 515 ,(1999) , 10.1016/S0955-2219(98)00210-6