Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition
作者： X.L. Chen , B.H. Xu , J.M. Xue , Y. Zhao , C.C. Wei
DOI: 10.1016/J.TSF.2006.09.039
关键词:
摘要: Abstract Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H2O as reactant gases diborane (B2H6) an n-type dopant gas. The structural, electrical optical properties of ZnO doped at different B2H6 flow rates investigated. X-ray diffraction spectra scanning electron microscopy images indicate that boron-doping plays important role on the microstructure films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in visible light infrared range) mobility (17.8 cm2 V− 1 s− 1) obtained for 700-nm ZnO:B deposited 20 cm × 20 cm glass substrates temperature 443 K. After long-term exposure air, also showed a better stability than un-doped samples. application ZnO:B/Al back contacts, short circuit current density was effectively enhanced about 3 mA/cm2 small area a-Si:H cell efficiency 9.1% large-area (20 cm × 20 cm) a-Si solar module.
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