Sol–gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization
作者： Chien-Yie Tsay , Wei-Tse Hsu
DOI: 10.1016/J.CERAMINT.2013.02.086
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摘要: Abstract We report the influence of boron doping concentration on microstructure, electrical and optical properties solution-processed zinc oxide (ZnO) thin films. The B in resultant solutions was varied from 0 to 5 at%, pH value each synthetic solution adjusted 7.0. XRD measurements, SEM observations, SPM examinations revealed that produced ZnO films consisting a fine grain structure with flat surface morphology. Moreover, doped raised texture coefficient along (002) plane. All B-doped (ZnO:B) exhibited higher transparency than undoped film wavelengths between 350 650 nm. band gap Urbach energy ZnO:B were those film. According transport characteristics, 1% highest Hall mobility 17.9 cm 2 /V s, electron 1.2×10 15 cm −3 , lowest resistivity 2.2×10 Ω cm among all
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