作者: B.N. Pawar , S.R. Jadkar , M.G. Takwale
DOI: 10.1016/J.JPCS.2005.08.086
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摘要: Abstract Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation boron doping concentration in reducing solution film properties was investigated. Low angle X-ray analysis showed that the polycrystalline fitting well with a hexagonal wurtzite structure have preferred orientation [002] direction. resistivity 2.54×10 −3 Ω-cm optical transmittance >90% obtained at optimized concentration. band gap ZnO:B found ∼3.27 eV from spectra for as-deposited films. Due to their excellent electrical properties, are promising contender potential use as window layer electrodes solar cells.