Synthesis and properties of Boron doped ZnO thin films by spray CVD technique at low substrate temperature

摘要: Intrinsic and nanocrystalline properties of Boron doped ZnO thin films were synthesized with a newly designed spray CVD technique from non-aqueous solution Zinc acetate [Zn(CH3COOH)2] as precursor Boric Acid doping solution. The major benefits this are precise stoichiometry its ability to deposit vapors on large surface area high uniformity thickness. commercialization potential is enhanced by the low deposition temperature. In view for providing Transparent Conducting Oxide (TCO) commercial application, effect dopant concentration 0.2 at% 1 in steps has been studied. crystalline these have investigated X- ray diffraction (XRD) technique. results reveal hexagonal wurtzite structure indicating preferential orientation along caxis. Debye –Scherrer calculation indicate deteriorated crystallinity induced doping. well agreement morphology film analyzed Field Emission Scanning Micrographs topography characterized AFM. Moreover, enhances optoelectronic properties. average optical transmittance increases showing maximum transparency 0.8at% (≈90%). curve indicates interference fringe pattern between wave fronts generated at two interfaces (air substrate). extinction coefficient nearly equal zero which suggests there no absorption light grain boundary. blue shifted band gap resulted reduced particle size. Nevertheless, refractive index edge similar that single crystal ZnO. significant electrical conductivity observed optimized B (0.8 %). obtained 200°C show highest carrier ≈ 10 20 cm -3 lowest resistivity 0.39x10 Ωcm. From temperature dependence measurements, activation energy was also calculated.