Anomalous Te Inclusion Size and Distribution in CdZnTeSe
作者： S. Hwang , H. Yu , A. E. Bolotnikov , R. B. James , K. Kim
关键词: Solidus 、 Thermal conductivity 、 Materials science 、 Analytical chemistry 、 Selenium 、 Band gap 、 Dopant 、 Partial pressure 、 Ingot 、 Crystal
摘要: The effect of selenium in CdZnTe was investigated by characterizing the Cd0.9Zn0.1Te0.98Se0.02 crystal. bandgap is smaller than Cd0.9Zn0.1Te. In addition, its value ingot follows zinc-segregation tendency that selenium. There a recognizable difference amounts compensating dopants, distribution Te inclusions, and performance detector. indium doping for compensation were reduced addition selenium, which provided highest partial pressure melts. Thus, generation Cd vacancies, native defect CdZnTe, prevented. size inclusions varied from tip, middle, heel CdZnTeSe ingot. may change thermal conductivity melts, responsible reducing bulging retrograde solidus line near stoichiometry. planar detector showed 59.5-keV gamma peak Am-241 with an 11% energy resolution.
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