Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors
作者： KiHyun Kim , Geunwoo Jeng , Pilsu Kim , Jonghak Choi , A. E. Bolotnikov
DOI: 10.1063/1.4817869
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摘要: The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT exhibit a relatively poor performance, although IR transmission microscopy measurements show that the have lower concentration smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) for both detectors reveal same trap levels, but there is clear difference densities 0.26- 0.42-eV traps two schemes. These are probably attributed Cd vacancies anti-site defects, respectively. In addition, some likelihood anti-correlated respect each other.
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