Quantum capacitance in scaled down III–V FETs
作者： Donghyun Jin , Daehyun Kim , Taewoo Kim , Jesus A. del Alamo
DOI: 10.1109/IEDM.2009.5424312
关键词: Quantum capacitance 、 Transistor 、 Logic gate 、 Gallium arsenide 、 Capacitance 、 Optoelectronics 、 Differential capacitance 、 High-electron-mobility transistor 、 Materials science 、 Field-effect transistor
摘要: We have built a physical gate capacitance model for III–V FETs that incorporates quantum and centroid in the channel. verified its validity with simulations (Nextnano) experimental measurements on High Electron Mobility Transistors (HEMTs) InAs InGaAs channels down to 30 nm length. Our confirms operational range of these devices, significantly lowers overall capacitance. In addition, channel is also found significant impact provides number suggestions scaling future FETs.
sci-hub.se 参考文章(4)
Ch Köpf, H Kosina, S Selberherr, Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport Solid-state Electronics. ,vol. 41, pp. 1139- 1152 ,(1997) , 10.1016/S0038-1101(97)00051-8
Dae-Hyun Kim, JesÚs A. del Alamo, 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz IEEE Electron Device Letters. ,vol. 29, pp. 830- 833 ,(2008) , 10.1109/LED.2008.2000794
S. Takagi, A. Toriumi, Quantitative understanding of inversion-layer capacitance in Si MOSFET's IEEE Transactions on Electron Devices. ,vol. 42, pp. 2125- 2130 ,(1995) , 10.1109/16.477770
Himadri S. Pal, Kurtis D. Cantley, Shaikh Shahid Ahmed, Mark S. Lundstrom, Influence of Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs MOSFETs IEEE Transactions on Electron Devices. ,vol. 55, pp. 904- 908 ,(2008) , 10.1109/TED.2007.914830