Bonding method and bonding apparatus
作者： Yasuhide Ohno , Tatsuya Takeuchi , Taizo Hagihara , Keisuke Taniguchi
DOI:
关键词: Semiconductor chip 、 Electrode 、 Substrate (electronics) 、 Hydrogen radical 、 Oxide 、 Optoelectronics 、 Electrical contacts 、 Materials science
摘要: [Object] To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. [Means to Realize Object] An oxide film reducing treatment with hydrogen radicals is carried out for surfaces lead-out electrodes ( 5 ) and bump 6 on semiconductor chip 2 8 an intermediate substrate 3 ), and, after that, are aligned each other. After pressure applied bond ).
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