Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
作者： Yann-Wen Lan , Linh-Nam Nguyen , Shui-Jin Lai , Ming-Chou Lin , Chieh-Hsiung Kuan
DOI: 10.1063/1.3619177
关键词: Crystallographic defect 、 Optoelectronics 、 Microstructure 、 Electron 、 Materials science 、 Cantilever 、 Nanowire 、 Silicon 、 Welding 、 Nanotechnology 、 Carbon nanotube
摘要: A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT composed a gold probe welded to thick CNT, which turn attached thinner CNT. rigid welding thicker allows precise placement along measured nanowire while joint between and absorbs push pull forces repeated relocation. For demonstration purpose, determines site charges measures amount trapped electrons.
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