High aspect ratio trench structures with void-free fill material
作者： Eileen Valdez , Hui Chen , James J. Murphy
DOI:
关键词: Electrode 、 Trench 、 Materials science 、 Electrical engineering 、 Electrical conductor 、 Conductivity 、 Body region 、 Field-effect transistor 、 Semiconductor 、 Void (astronomy) 、 Composite material
摘要: A field effect transistor (FET) includes a trench extending into semiconductor region. conductive electrode is disposed in the trench, and insulated from region by dielectric layer. The liner lining layer along opposite sidewalls of trench. has tapered edges such that thickness gradually increases top surface to point lower half electrode. further fill material sandwiched liner. FET drift first conductivity type region, body second over Source regions extend adjacent
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