Methods and systems for barrier layer surface passivation
作者： William Thie , Tiruchirapalli Arunagiri , Alex Yoon , Yezdi Dordi , Fritz Redeker
DOI:
关键词: Barrier layer 、 Materials science 、 Optoelectronics 、 Passivation 、 Deposition (law) 、 Copper 、 Layer (electronics) 、 Surface (mathematics) 、 Nanotechnology 、 Substrate (printing) 、 Semiconductor device
摘要: This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present is a method depositing gapfill copper layer onto barrier device metallization. In one embodiment, includes forming on surface substrate subjecting process condition so as form removable passivated layer. The further removing from Another an integrated system comprises at least module configured deposition formation other removal transfer coupled that can be transferred between modules substantially without exposure oxide-forming environment.
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