Formation without vacuum break of sacrificial layer that dissolves in acidic activation solution within interconnect
作者： Krishnashree Achuthan , Sergey Lopatin
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摘要: For filling an interconnect opening of integrated circuit formed on a semiconductor substrate, underlying material is at any exposed walls the opening. A sacrificial layer protective The and are without vacuum break. soluble in acidic catalytic solution used for depositing seed layer. substrate having placed within dissolved away from by such that to solution. deposited conductive fill grown electroless deposition. present invention may be particular advantage when comprised tantalum as diffusion barrier material, magnesium. In case, includes palladium chloride and/or tin with hydrochloric acid dissolving material.
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