Low‐Density Injected Plasma in p‐Type Indium Antimonide

摘要: Properties of low‐density injected plasma in p‐InSb have been studied. Measurements made on n+‐p‐p+ diodes biased the forward direction at 77°K. The time dependent behavior I‐V characteristics has measured by application dc pulses, with and without a transverse magnetic field present. At short periods after applying or low injection levels, current is carried mainly holes major part sample. long pulses high levels shape governed plasma, steady state reached within about 10 μsec. In deflected Suhl effect towards surface. There electrons recombine rate. This mechanism reduces number carriers which contribute to conduction. 300 G curves similar as ones period pulse. T...