An investigation of the effect of a magnetic field on the forward characteristics of some silicon diodes at low temperatures
作者： R V Aldridge , K Davis , M Holloway
DOI: 10.1088/0022-3727/8/1/014
关键词: Atomic physics 、 Diode 、 Silicon 、 Protein filament 、 Physics 、 Current (fluid) 、 Voltage 、 Recombination 、 Beta (plasma physics) 、 Optoelectronics 、 Magnetic field
摘要: It was found that at low currents and fields the steady-state forward postswitching curve of a silicon diode temperatures (below 15K) could be represented approximately by logI approximately=A+CV-B2( alpha sin2 theta + beta sin4 ) where I is current, V voltage, angle between direction current flow magnetic field B, A, C, are constants. A simple filament model with enhanced surface recombination used to explain results.
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