On the behaviour of forward biased silicon diodes at low temperatures

作者: Richard V. Aldridge

DOI: 10.1016/0038-1101(74)90182-8

关键词:

摘要: … The low temperature region is identified by the … voltage. Another freature of this region is that the low resistance part of the forward characteristic is almost independent of temperature. …

参考文章(6)
H. Heinrich, F. Kuchar, K. Merinsky, Low‐Density Injected Plasma in p‐Type Indium Antimonide Journal of Applied Physics. ,vol. 41, pp. 296- 302 ,(1970) , 10.1063/1.1658337
James E. Nordman, Hans Kvinlaug, Negative‐Resistance Current‐Voltage Characteristics of an Indium Antimonide p+−p−n+ Diode Journal of Applied Physics. ,vol. 39, pp. 3244- 3250 ,(1968) , 10.1063/1.1656763
K. Homma, Y. Kobayashi, T. Fukami, Effect of magnetic field on current filament in gold‐doped silicon Applied Physics Letters. ,vol. 21, pp. 154- 156 ,(1972) , 10.1063/1.1654323
David K. Ferry, Helmut Heinrich, Effect of Magnetic Fields on Impact Ionization Rates and Instabilities in InSb Physical Review. ,vol. 169, pp. 670- 673 ,(1968) , 10.1103/PHYSREV.169.670
C. Kittel, Aldert van der Ziel, Solid state physical electronics ,(1957)
N. Klein, Electrical Breakdown in Solids Advances in Electronics and Electron Physics Volume 26. ,vol. 26, pp. 309- 424 ,(1969) , 10.1016/S0065-2539(08)60985-3