Damage formation in Si under irradiation with PF n + ions of different energies
作者： K. V. Karabeshkin , P. A. Karaseov , A. I. Titov
DOI: 10.1134/S1063782613020115
关键词: Range (particle radiation) 、 Ion implantation 、 Polyatomic ion 、 Silicon 、 Irradiation 、 Atomic physics 、 Ion 、 Chemistry 、 Atomic and Molecular Physics, and Optics 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: The generation of structural damage in silicon irradiated with atomic (P+) and molecular (PF 4 + ) ions is experimentally studied a wide range ion energies. A strong effect caused by the over-lapping collision cascades created atoms comprising revealed near sample surface all cases considered. Theoretical assessments depths possible nonlinear process have shown good agreement experimental data. Calculations also that role energy spikes decreases an increase ion.
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