作者: Jin-Yuan Lee , Mou-Shiung Lin
DOI:
关键词: Flip chip 、 Materials science 、 Wafer 、 Copper interconnect 、 Sputtering 、 Photoresist 、 Electronic engineering 、 Electroplating 、 Signal 、 Optoelectronics 、 Passivation
摘要: The present invention adds one or more thick layers of polymer dielectric and thick, wide metal lines on top a finished semiconductor wafer, post-passivation. may be used for long signal paths can also power buses planes, clock distribution networks, critical signal, re-distribution I/O pads flip chip applications. Photoresist defined electroplating, sputter/etch, dual triple damascene techniques are forming the via fill.