作者: Heinz H. Busta
DOI:
关键词: Materials science 、 Voltage 、 Inversion (meteorology) 、 Electrical engineering 、 Transistor 、 Wheatstone bridge 、 Elastic beam 、 Field-effect transistor 、 Biasing 、 Strain gauge 、 Optoelectronics
摘要: A strain gauge element having an elastic beam with field effect transistors deposited on one surface arranged in a Wheatstone bridge so that deformation of the produces proportional imbalance signal across bridge, and means for applying gate biasing voltage to at least such being adjustable can be electrically balanced null or no load condition.