作者: Mikhail V. Surovikov , Vladimir E. Beiden , Vladimir M. Karneev , Georgy G. Iordan , Alexei V. Beloglazov
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摘要: A semiconductor strain gauge transducer comprising a sensitive element which is monocrystal sapphire substrate carrying epitaxial silicon gauges of p-type conduction. The hole concentration in the 3.5·1019 to 3·1020 cm-3. are interconnected form bridge or differential strain-sensitive circuit.