Calculated elastic constants and deformation potentials of cubic SiC.
作者： W. R. L. Lambrecht , B. Segall , M. Methfessel , M. van Schilfgaarde
关键词: Poisson's ratio 、 Lattice constant 、 Condensed matter physics 、 Phonon 、 Brillouin zone 、 Deformation (engineering) 、 Tensor 、 Local-density approximation 、 Bulk modulus 、 Materials science
摘要: … strain deformation potentials. We also obtain the optical-mode deformation patentials from … We have calculated all the relevant deformation potentials for the I' and X states in the upper …
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M. Methfessel, Elastic constants and phonon frequencies of Si calculated by a fast full-potential linear-muffin-tin-orbital method Physical Review B. ,vol. 38, pp. 1537- 1540 ,(1988) , 10.1103/PHYSREVB.38.1537
M. Methfessel, C. O. Rodriguez, O. K. Andersen, Fast full-potential calculations with a converged basis of atom-centered linear muffin-tin orbitals: Structural and dynamic properties of silicon. Physical Review B. ,vol. 40, pp. 2009- 2012 ,(1989) , 10.1103/PHYSREVB.40.2009
H. M. Polatoglou, M. Methfessel, Comparison of the Harris and the Hohenberg-Kohn-Sham functionals for calculation of structural and vibrational properties of solids. Physical Review B. ,vol. 41, pp. 5898- 5903 ,(1990) , 10.1103/PHYSREVB.41.5898
O. Krogh Andersen, Linear methods in band theory Physical Review B. ,vol. 12, pp. 3060- 3083 ,(1975) , 10.1103/PHYSREVB.12.3060
P. Hohenberg, W. Kohn, Inhomogeneous Electron Gas Physical Review. ,vol. 136, pp. 864- 871 ,(1964) , 10.1103/PHYSREV.136.B864
W. Kohn, L. J. Sham, Self-Consistent Equations Including Exchange and Correlation Effects Physical Review. ,vol. 140, pp. 1133- 1142 ,(1965) , 10.1103/PHYSREV.140.A1133
U von Barth, L Hedin, A local exchange-correlation potential for the spin polarized case. i Journal of Physics C: Solid State Physics. ,vol. 5, pp. 1629- 1642 ,(1972) , 10.1088/0022-3719/5/13/012
Z. C. Feng, W. J. Choyke, J. A. Powell, Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system Journal of Applied Physics. ,vol. 64, pp. 6827- 6835 ,(1988) , 10.1063/1.341997
Yu.M. Tairov, V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals Journal of Crystal Growth. ,vol. 43, pp. 209- 212 ,(1978) , 10.1016/0022-0248(78)90169-0
Shigehiro Nishino, J. Anthony Powell, Herbert A. Will, Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices Applied Physics Letters. ,vol. 42, pp. 460- 462 ,(1983) , 10.1063/1.93970