Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate
作者： Roman Olac-vaw , Hyun-Chul Kang , Hiromi Karasawa , Yu Miyamoto , Hiroyuki Handa
关键词: Voltage 、 Optoelectronics 、 Heterojunction 、 Dirac (software) 、 Field-effect transistor 、 Ambipolar diffusion 、 Materials science 、 Layer (electronics) 、 Schottky diode 、 Graphene 、 General Engineering 、 General Physics and Astronomy
摘要: In this research, ambipolar behavior, which is one of graphene's unique characteristics, studied for the epitaxial graphene formed on 3C-SiC grown a Si substrate. The channel believed to be unintentionally p-type-doped at Dirac-point voltages approximately +0.11 +0.12 V. However, as drain voltage negatively increases, Dirac point shifts. current in p-channel mode operation saturates lower level than that n-channel operation. These behaviors are caused by asymmetric carrier transport throughout channel-substrate heterojunctions (i.e., graphene, thin n-type SiC layer, and p-type substrate) source/drain Schottky metal contacts. interface between substrate has significant effect channels. results may helpful understanding device suppressing operation, leading unipolar FET
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