Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

摘要: Epitaxial graphene on Si (GOS) using a heteroepitaxy of 3C-SiC/Si has attracted recent attention owing to its capability fuse with Si-based electronics. We demonstrate that the stacking, interface structure, and hence, electronic properties GOS can be controlled by tuning surface termination 3C-SiC(111)/Si, proper choice substrate SiC growth conditions. On Si-terminated 3C-SiC(111)/Si(111) surface, is Bernal-stacked band splitting, while C-terminated 3C-SiC(111)/Si(110) turbostratically stacked without splitting. This work enables us precisely control for forthcoming devices.