Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH$_{4}$ Pretreatment
作者： Shota Sanbonsuge , Shunsuke Abe , Hiroyuki Handa , Ryota Takahashi , Kei Imaizumi
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摘要: The epitaxy of graphene on 3C-SiC/Si (GOS) has attracted much attention owing to its viability fuse with Si-based technologies. It is known that the surface condition 3C-SiC thin film before graphitization plays a decisive role in determining quality GOS film. We have investigated effect pretreatment vacuo at SiH4 partial pressure 6.7 ×10-4 Pa subsequent formation graphene. As result, it revealed restores defects SiC surface, such as Si vacancy and point formed by presence native oxides, improves found be highest when substrate temperature 1173 K.
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