作者: Zixing Zou , Dong Li , Junwu Liang , Xuehong Zhang , Huawei Liu
DOI: 10.1039/C9NR10387B
关键词: Chemical vapor deposition 、 Optoelectronics 、 Biasing 、 Epitaxy 、 Laser 、 Responsivity 、 Band gap 、 Materials science 、 Heterojunction 、 Photodetector
摘要: … and could serve as a near-infrared light absorption layer in the heterostructure device. In this sense, we further probed the photoresponse behavior in the near-infrared range. Fig. 5a …