Order-disorder behavior at thin film oxide interfaces
DOI: 10.1016/J.COSSMS.2020.100870
关键词: Thin film 、 Future study 、 Order (biology) 、 Materials science 、 Oxide 、 Nanotechnology
摘要: Abstract Order-disorder processes fundamentally determine the structure and properties of many important oxide systems for energy computing applications. While these have been intensively studied in bulk materials, they are less investigated understood nanostructured oxides highly non-equilibrium conditions. These can now be realized through a range deposition techniques probed at exceptional spatial chemical resolution, leading to greater focus on interface dynamics. Here we survey selection recent studies order-disorder behavior thin film interfaces, with particular emphasis emergence order during synthesis disorder extreme irradiation environments. We summarize key trends identify directions future study this growing research area.
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