Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors
作者： Hongwei Chen , Chuanren Yang , Chunlin Fu , Jihua Zhang , Jiaxuan Liao
DOI: 10.1016/J.APSUSC.2007.10.096
关键词: Cavity magnetron 、 Transmission electron microscopy 、 Dielectric 、 Sputtering 、 Materials science 、 Analytical chemistry 、 X-ray photoelectron spectroscopy 、 High-resolution transmission electron microscopy 、 Layer (electronics) 、 Thin film
摘要: Abstract Ba 0.6 Sr 0.4 TiO 3 thin films were deposited on Pt/SiO 2 /Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the about 7–8 nm thickness. It found was diminished to 2–3 nm thickness reducing initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show high Ti atomic concentration results in thick interfacial layer. Moreover, symmetry ν of ɛ r – V curve BST film enhanced from 52.37 95.98%. Meanwhile, tunability, difference negative positive remanent polarization ( P ), coercive field E C ) are remarkably improved.
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