作者: E. J. Cukauskas , Steven W. Kirchoefer , J. M. Pond
DOI: 10.1063/1.1289052
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摘要: The structural and electrical characteristics of Ba0.5Sr0.5TiO3 (BST) thin films deposited by inverted cylindrical magnetron rf sputtering have been investigated. This unconventional sputter deposition technique consisting a hollow composite target BST, high argon/oxygen gas pressure 53.2 Pa (400 μm), 750 °C substrate temperature was employed for depositing low-loss BST films. were postannealed in tube furnace at 780 °C 8 h flowing oxygen. Atomic-force microscopy revealed anisotropic grain growth with columnar structure protruding from the surface 0.25 μm size. X-ray diffractometry shows to be purely (h00) oriented certain parameters. lattice parameter best film slightly larger than that bulk BST. Other conditions yielded having many powder peaks. Capacitance versus voltage measured 50 MHz 20 GHz. Device Q values >600, beyond resol...