Novel application of MgF2as a back reflector in a-SiOx:H thin-film solar cells

作者: Dong-Won Kang , Porponth Sichanugrist , Makoto Konagai

DOI: 10.7567/APEX.7.082302

关键词: Nanocrystalline siliconReflection (mathematics)OxideNanometreBack reflectorPhotocurrentMaterials scienceBuffer (optical fiber)OptoelectronicsThin film solar cellOpticsGeneral EngineeringGeneral Physics and Astronomy

摘要: We present high-quality a-SiOx:H solar cells with a very thin i-layer of 100 nm fabricated at low temperature °C. To boost the photocurrent such absorber, we suggested application low-index MgF2 buffer n-type nanocrystalline silicon oxide (n-nc-SiOx:H)/Ag nanotextured interface to suppress absorption loss Ag back contact. The introduction only few nanometers (~4 nm) thickness enhanced reflection n-nc-SiOx:H/Ag interface, which resulted in reinforcement short-circuit current by about 7.3% from 9.60 10.30 mA/cm2 while almost maintaining Voc and FF. demonstrated efficiency improvement up 7.66%

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