作者: Dong-Won Kang , Porponth Sichanugrist , Makoto Konagai
关键词: Nanocrystalline silicon 、 Reflection (mathematics) 、 Oxide 、 Nanometre 、 Back reflector 、 Photocurrent 、 Materials science 、 Buffer (optical fiber) 、 Optoelectronics 、 Thin film solar cell 、 Optics 、 General Engineering 、 General Physics and Astronomy
摘要: We present high-quality a-SiOx:H solar cells with a very thin i-layer of 100 nm fabricated at low temperature °C. To boost the photocurrent such absorber, we suggested application low-index MgF2 buffer n-type nanocrystalline silicon oxide (n-nc-SiOx:H)/Ag nanotextured interface to suppress absorption loss Ag back contact. The introduction only few nanometers (~4 nm) thickness enhanced reflection n-nc-SiOx:H/Ag interface, which resulted in reinforcement short-circuit current by about 7.3% from 9.60 10.30 mA/cm2 while almost maintaining Voc and FF. demonstrated efficiency improvement up 7.66%