Organometallic precursors for seed/barrier processes and methods thereof
作者： Harsono Simka , John Plombon , Adrien Lavoie , Juan Dominguez , Joseph Han
DOI:
关键词: Substrate (chemistry) 、 Physical vapor deposition 、 Deposition (phase transition) 、 Chemistry 、 Inorganic chemistry 、 Atomic layer deposition 、 Chemical vapor deposition 、 Hybrid physical-chemical vapor deposition
摘要: Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is ruthenium-containing, tantalum-containing or combination thereof may be deposited by atomic layer deposition, chemical vapor and/or physical deposition.
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