Influence of surface Si–Ag bonds on photoluminescence of porous silicon
作者： Y. W. Lu , X. W. Du , J. Sun , X. Han , S. A. Kulinich
DOI: 10.1063/1.2353397
关键词: Light emission 、 Inorganic chemistry 、 Materials science 、 Porous medium 、 Nanocrystalline silicon 、 Photoluminescence 、 Porous silicon 、 Deposition (law) 、 Metal 、 Silicon
摘要: Porous silicon with surface Si–Ag bonds was prepared by depositing Ag on conventional electrochemically porous using electrodeposition method, and the influence of surface-bonded photoluminescence properties material studied. Photoluminescence intensity increases amount formed during electrochemical deposition. Further treatment leads to increased amounts Ag–O Ag–Ag surface. Such layers oxygen-bonded metallic are shown retard light emission from silicon.
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