A study on Si nanocrystal formation in Si-implanted SiO2 films by x-ray photoelectron spectroscopy
作者： Yang Liu , Tu Pei Chen , Yong Qing Fu , Man Siu Tse , Jang-Hsing Hsieh
DOI: 10.1088/0022-3727/36/19/L02
关键词:
摘要: X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared are used to study Si nanocrystal formation in Si-implanted SiO2 films as a function of thermal annealing. Analysis the XPS 2p peaks shows existence five chemical structures corresponding oxidation states Sin+ (n = 0, 1, 2, 3, 4) films, concentration each state is determined quantitatively. The results show clear picture evolution nanocrystals functions annealing temperature time. concentrations with explained terms decompositions suboxides three 3) implanted Si.
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