Investigation of Wafer Level Au-Si Eutectic Bonding of Shape Memory Alloy (SMA) with Silicon
作者： Sobia Bushra
DOI:
关键词: Composite material 、 Bond strength 、 Diffusion barrier 、 Silicon 、 Wafer 、 Materials science 、 Adhesive 、 Silicon oxide 、 Eutectic system 、 Forensic engineering 、 Eutectic bonding
摘要: The objective of this research work was to investigate the low temperature gold silicon eutectic bonding SMA with wafers. carried out optimize a bond process better yield and higher strength. layer thickness, processing temperature, diffusion barrier, adhesive layer, removal oxide are important parameters in determining reliable uniform bond. Based on previous Au-Si bonding, 7 different Si substrates were prepared effect above mentioned parameters. Cantilevers sizes from steel sheets. Afterwards, these cantilevers bonded substrates. strength two which establish quality. Quantitative analysis by shear tests. Scanning Electron Microscopy (SEM) Mapping used for interface elements across has resulted onto wafers high Steel cantilever can also be alloy but sheet is critical. Further needed fabrication stresses interface. It found that amount key factor bonding.
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