Memory device, memory and method for processing such memory
作者： Christian Peters , Robert Strenz
DOI:
关键词: Non-volatile memory 、 Sense amplifier 、 Memory refresh 、 Semiconductor memory 、 Computer science 、 Dynamic random-access memory 、 Computer hardware 、 Non-volatile random-access memory 、 Registered memory 、 Computer memory
摘要: An integrated memory device, an chip and a method for fabricating device is disclosed. One embodiment provides at least one with drain, source, floating gate, selection gate control wherein the conductivity between drain source can be controlled independently via gate.
lens.org 参考文章(52)
Yuji Takeuchi, Hiroaki Hazama, Mitsuhiro Noguchi, Akira Goda, Michiharu Matsui, Semiconductor device with trench isolation between two regions having different gate insulating films ,(2002)
Yueh Yale Ma, Metal-gate non-volatile memory cell ,(1998)
Hiromi Uenoyama, Junichi Hikita, Non-volatile memory elements ,(1998)
Junichi Miyamoto, Koji Sakui, Nonvolatile semiconductor memory ,(2007)
Cheng-Yuan Hsu, Chih-Wei Hung, Da Sung, Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode ,(2003)
Ching Dong Wang, Ching-Shi Jeng, Method of manufacturing a scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate ,(2003)
Prateep Tuntasood, Chiou-Feng Chen, Der-Tsyr Fan, Jung-Chang Lu, Flash memory with trench select gate and fabrication process ,(2003)
Arup Bhattacharyya, Luan C. Tran, Kirk D. Prall, Band-engineered multi-gated non-volatile memory device with enhanced attributes ,(2005)
Yupin Kawing Fong, Gheorghe Samachisa, Eliyahou Harari, Daniel C. Guterman, Eeprom with split gate source side injection ,(1998)