Oxidation Behavior of Ti 1-x Al x N Barrier Layer for Memory Devices
作者：
DOI: 10.3740/MRSK.2002.12.9.718
关键词: Crystallinity 、 Materials science 、 Sputtering 、 Analytical chemistry 、 Oxide 、 Layer (electronics) 、 Thin film 、 Activation energy 、 Barrier layer 、 Diffusion
摘要: N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and mechanism of investigated a function Al content. Lattice parameter grain size decreased with increasing the content Oxidation film higher is slow then, total oxide thickness thinner than that lower film. Oxide formed on surface AlTiNO layer. / diffusion limited process time increased parabolic law. activation energy oxygen diffusion, Ea coefficient, D /XN 2.1eV ~ /s, respectively. XN showed good resistance.
koreascience.or.kr参考文章(21)
O. Knotek, M. Böhmer, T. Leyendecker, On structure and properties of sputtered Ti and Al based hard compound films Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 4, pp. 2695- 2700 ,(1986) , 10.1116/1.573708
Kwang Ho Kim, Seong Ho Lee, Comparative studies of TiN and Ti1−xAlxN by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/H2/Ar gas mixture Thin Solid Films. ,vol. 283, pp. 165- 170 ,(1996) , 10.1016/0040-6090(96)08766-4
Sang‐Hyeob Lee, Byoung‐June Kim, Hyung‐Hwan Kim, Jung‐Joong Lee, None, Structural analysis of AlN and (Ti1−XAlX)N coatings made by plasma enhanced chemical vapor deposition Journal of Applied Physics. ,vol. 80, pp. 1469- 1473 ,(1996) , 10.1063/1.363015
S Hofmann, Formation and diffusion properties of oxide films on metals and on nitride coatings studied with Auger electron spectroscopy and X-ray photoelectron spectroscopy Thin Solid Films. pp. 648- 664 ,(1990) , 10.1016/0040-6090(90)90216-Z
Y. Tanaka, T. M. Gür, M. Kelly, S. B. Hagstrom, T. Ikeda, K. Wakihira, H. Satoh, Properties of (Ti1−xAlx)N coatings for cutting tools prepared by the cathodic arc ion plating method Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 10, pp. 1749- 1756 ,(1992) , 10.1116/1.577742
J Kourtev, R Pascova, Reactively magnetron sputtered TiAlz.sbnd;N thin films with enhanced mechanical properties Vacuum. ,vol. 47, pp. 1197- 1201 ,(1996) , 10.1016/0042-207X(96)00195-9
U. Wahlström, L. Hultman, J.-E. Sundgren, F. Adibi, I. Petrov, J.E. Greene, Crystal growth and microstructure of polycrystalline Ti1−xAlxN alloy films deposited by ultra-high-vacuum dual-target magnetron sputtering Thin Solid Films. ,vol. 235, pp. 62- 70 ,(1993) , 10.1016/0040-6090(93)90244-J
J. Laimer, H. Störi, P. Rödhammer, Titanium nitride deposited by plasma-assisted chemical vapour deposition Thin Solid Films. ,vol. 191, pp. 77- 89 ,(1990) , 10.1016/0040-6090(90)90276-J
M. Wittmer, J. Noser, H. Melchior, Oxidation kinetics of TiN thin films Journal of Applied Physics. ,vol. 52, pp. 6659- 6664 ,(1981) , 10.1063/1.328659
Rama I. Hegde, Thin film properties of low-pressure chemical vapor deposition TiN barrier for ultra-large-scale integration applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 11, pp. 1287- 1296 ,(1993) , 10.1116/1.586931