Scaling constraints in nanoelectronic random-access memories.
作者： Christian J Amsinck , Neil H Di Spigna , David P Nackashi , Paul D Franzon
DOI: 10.1088/0957-4484/16/10/047
关键词: Magnetoresistive random-access memory 、 Electronic engineering 、 Crossbar switch 、 Materials science 、 Scalability 、 CMOS 、 Margin (machine learning) 、 Tunnel magnetoresistance 、 Semiconductor memory 、 Random access
摘要: Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the potential to present significant area advantages (4 6F2) compared CMOS-based systems. The scalability of these conductivity-switched RAM arrays is examined by establishing criteria for correct functionality based on readout margin. Using a combined circuit theoretical modelling simulation approach, impact both device interconnect architecture conductivity-state system quantified. This establishes showing conditions on/off ratios large-scale integration devices, guiding design. With 10% margin resistive load, needs an ratio at least 7 be integrated into 64 × array, while 43 necessary scale 512 512.
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