Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

摘要: The use of silicon oxynitride (SiO x N y ) as a sacrificial material for forming microelectromechanical (MEM) device is disclosed. Whereas conventional materials such dioxide and silicate glasses are compressively strained, the composition can be selected to either tensile-strained or substantially-stress-free. Thus, used in combination with limit an accumulation compressive stress MEM device; alternately formed entirely oxynitride. Advantages gained from include formation polysilicon members that substantially free residual stress, thereby improving reliability ability form higher degree complexity more layers structural than would possible using compressively-strained materials; improved manufacturability resulting elimination wafer distortion arise excess accumulated materials. present invention useful many different types devices including accelerometers, sensors, motors, switches, coded locks, flow-control devices, without integrated electronic circuitry.