Next generation of extreme-resolution electron beam lithography

作者: John N. Randall , James H. G. Owen , Joseph Lake , Ehud Fuchs

DOI: 10.1116/1.5119392

关键词: PhysicsScanning tunneling microscopeElectron-beam lithographyNano-Atomic layer depositionResistNanolithographyLithographyElectronCondensed matter physics

摘要: … tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be … the authors will refer to as conventional electron beam lithography (CEBL), is reaching its …

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