Modulated Rashba interaction in a quantum wire: Spin and charge dynamics

摘要: It was recently shown that a spatially modulated Rashba spin-orbit coupling in quantum wire drives transition from metallic to an insulating state when the wave number of modulation becomes commensurate with Fermi length electrons [G. I. Japaridze et al., Phys. Rev. B v.80 041308(R) (2009)]. On basis experimental data gated InAs heterostructure it suggested effect may be put practical use future spin transistor design. In present article we revisit problem and detailed analysis of the underlying physics. First, explore how build-up charge density correlations due periodic gate configuration produces influences state. The interplay between modulations turns out quite subtle: Depending on relative phase two modulations, charge-density either enhance or reduce current blockade effect. Secondly, inquire about role the Dresselhaus is generically embedded semiconductor heterostructure. While found work against state, small most materials. Using effective field theory approach, also carry effects electron-electron interactions, show single-particle gap can extracted more easily accessible collective excitation thresholds. smallness gap together anti-phase relation and chemical potential pose serious difficulties for realizing Rashba-controlled switch InAs-based device. Some alternative designs are discussed.