Design of a femtosecond laser assisted tomographic atom probe
作者： B. Gault , F. Vurpillot , A. Vella , M. Gilbert , A. Menand
DOI: 10.1063/1.2194089
关键词: Evaporation (deposition) 、 Materials science 、 Laser 、 Silicon 、 Femtosecond 、 Optics 、 Field (physics) 、 Atom probe 、 Ion 、 Electric field
摘要: A tomographic atom probe (TAP) in which the atoms are field evaporated by means of femtosecond laser pulses has been designed. It is shown that evaporation assisted enhanced subwavelength dimensions specimen without any significant heating specimen. In addition, as compared with conventional TAP, due to very short duration pulses, no spread energy emitted ions observed, leading a high mass resolution straight TAP wide angle configuration. At last, can be used bring intense electric required for on poor conductive materials such intrinsic Si at low temperature. this article, performance described and illustrated through investigation metals, oxides, silicon materials.
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