Atom probe tomography study on Ge1 − x − ySnxCy hetero-epitaxial film on Ge substrates
作者： Eiji Kamiyama , Koji Sueoka , Kengo Terasawa , Takashi Yamaha , Osamu Nakatsuka
DOI: 10.1016/J.TSF.2015.09.002
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摘要: Abstract We analyzed the incorporation of C atoms into a ternary alloy Ge 1 − x − y Sn x y epitaxial film on substrates sub-nanometer scale by using atom probe tomography. Periodic distributions from individual (111) atomic planes were observed both in and at substrates. Sn/C had non-uniform film. They also demonstrated clear positive correlation their distributions. Substitutional only incorporated when an beam was applied onto under growth conditions.
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