Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution
作者： Yasuo Shimizu , Yoko Kawamura , Masashi Uematsu , Kohei M Itoh , Mitsuhiro Tomita
DOI: 10.1063/1.3236673
关键词:
摘要: Laser-assisted atom probe microscopy of 2 nm period Si28∕Si30 isotope superlattices (SLs) is reported. Three-dimensional distributions Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution the present analysis much higher than that secondary ion mass spectrometry (SIMS) even when SIMS performed a great care to reduce artifact due atomic mixing. Outlook Si SLs as ideal scales for three-dimensional position standards discussed.
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T. Kojima, R. Nebashi, K. M. Itoh, Y. Shiraki, Growth and characterization of 28Sin/30Sin isotope superlattices Applied Physics Letters. ,vol. 83, pp. 2318- 2320 ,(2003) , 10.1063/1.1613365
K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama, Y. Nagai, M. Hasegawa, Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe Applied Physics Letters. ,vol. 93, pp. 133507- ,(2008) , 10.1063/1.2995864
Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Experimental evidence of the vacancy-mediated silicon self-diffusion in single-crystalline silicon. Physical Review Letters. ,vol. 98, pp. 095901- ,(2007) , 10.1103/PHYSREVLETT.98.095901
F. Vurpillot, G. Da Costa, A. Menand, D. Blavette, Structural analyses in three-dimensional atom probe: a Fourier transform approach. Journal of Microscopy. ,vol. 203, pp. 295- 302 ,(2001) , 10.1046/J.1365-2818.2001.00923.X
D.J Larson, D.T Foord, A.K Petford-Long, H Liew, M.G Blamire, A Cerezo, G.D.W Smith, Field-ion specimen preparation using focused ion-beam milling Ultramicroscopy. ,vol. 79, pp. 287- 293 ,(1999) , 10.1016/S0304-3991(99)00055-8
Koji Inoue, Fumiko Yano, Akio Nishida, Takaaki Tsunomura, Takeshi Toyama, Yasuyoshi Nagai, Masayuki Hasegawa, Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique Applied Physics Letters. ,vol. 92, pp. 103506- ,(2008) , 10.1063/1.2891081
Kohei M. Itoh, Jiro Kato, Masafumi Uemura, Alexey K. Kaliteevskii, Oleg N. Godisov, Grigori G. Devyatych, Andrey D. Bulanov, Anatoli V. Gusev, Igor D. Kovalev, Pyotr G. Sennikov, Hans-J. Pohl, Nikolai V. Abrosimov, Helge Riemann, High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth Japanese Journal of Applied Physics. ,vol. 42, pp. 6248- 6251 ,(2003) , 10.1143/JJAP.42.6248
Yang Zhou, Christopher Booth-Morrison, David N. Seidman, On the Field Evaporation Behavior of a Model Ni-Al-Cr Superalloy Studied by Picosecond Pulsed-Laser Atom-Probe Tomography Microscopy and Microanalysis. ,vol. 14, pp. 571- 580 ,(2008) , 10.1017/S1431927608080963
Focused ion-beam specimen preparation for atom probe field-ion microscopy characterization of multilayer film structures Nanotechnology. ,vol. 10, pp. 45- 50 ,(1999) , 10.1088/0957-4484/10/1/010
Baptiste Gault, Michael P. Moody, Frederic de Geuser, Daniel Haley, Leigh T. Stephenson, Simon P. Ringer, Origin of the spatial resolution in atom probe microscopy Applied Physics Letters. ,vol. 95, pp. 034103- ,(2009) , 10.1063/1.3182351