作者: Yen-Nan Lin , Ching-Liang Dai
DOI: 10.3390/MI9080393
关键词: Biasing 、 Fabrication 、 Sense (electronics) 、 Common emitter 、 Sensitivity (electronics) 、 Hall effect 、 CMOS 、 Materials science 、 Magnetic field 、 Optoelectronics
摘要: Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which a three-axis sensing type, include magnetotransistor and four Hall elements. is utilized to detect the (MF) in x-axis y-axis, elements used sense MF z-axis. In addition emitter, bases collectors, additional collectors added magnetotransistor. enhance bias current carrier number, so that sensor sensitivity enlarged. fabrication easy because it does not require post-CMOS processing. Experiments depict 0.69 V/T its 0.55 y-axis MF.