Capacitance Type Mems Device, Manufacturing Method Thereof, And High Frequency Device
作者： Atsushi Isobe , Akihisa Terano
DOI:
关键词: Electrical engineering 、 Electrode 、 Conductor 、 Dielectric 、 Materials science 、 Optoelectronics 、 Microelectromechanical systems 、 Layer (electronics) 、 Capacitance 、 Dielectric layer
摘要: A capacitance type MEMS device capable of obtaining favorable switching characteristics relative to high frequency signals, a manufacturing method thereof, and performance mounting the are provided. typical example present invention has conductor layer formed on dielectric film. The film is lower electrode opposed an upper made metal vertically moves. area region where in equal or smaller than not region.
lens.org 参考文章(10)
Xi-Qing Sun, Folded spring based micro electromechanical (MEM) RF switch ,(1999)
Tsung-Kuan Allen Chou, Mechanism to prevent self-actuation in a microelectromechanical switch ,(2004)
Brian C. Martin, Resistor tuning network and method for microelectronic RC-based filters ,(2001)
Robert B. Stokes, Alvin M. Kong, MEMS millimeter wave switches ,(2002)
Scott Halden Goodwin-Johansson, High voltage micromachined electrostatic switch ,(2000)
Carl O. Bozler, Lawrence J. Kushner, Robert J. Parr, Richard G. Drangmeister, Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same ,(2001)
Shigeru Kasai, Yoshinori Ota, Kenichirou Suzuki, Tatsumi Ide, Micro-machine switch ,(2001)
Shuguang Chen, Micromachine MEMS switch ,(1999)
Shun Mitarai, Koji Naniwada, Masahiro Tanaka, Masahiro Tada, High frequency device, power supply device and communication apparatus ,(2005)
Atsushi Isobe, Hisanori Matsumoto, Kengo Asai, Hiroyuki Uchiyama, Akihisa Terano, RF-MEMS switch and its fabrication method ,(2004)