Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy
作者： N.H. Karam , R.G. Wolfson , I.B. Bhat , H. Ehsani , S.K. Ghandhi
DOI: 10.1016/0040-6090(93)90166-M
关键词: Atmospheric pressure 、 Cadmium telluride photovoltaics 、 Analytical chemistry 、 Inorganic chemistry 、 Partial pressure 、 Chemistry 、 Monolayer 、 Atomic layer epitaxy 、 Epitaxy 、 Crystal growth 、 Atmospheric temperature range
摘要: Abstract We present the first demonstration of atomic layer epitaxy (ALE) HgTe, CdTe and HgCdTe using Hg, Cd Te alkyl chemistry on GaAs substrates. The ALE deposition experiments were done at atmospheric pressure in a horizontal reactor equipped with fast switching manifold. Methylallytelluride, dimethylmercury (DMHg) dimethylcadmium used for Te, Hg sources respectively. HgTe was achieved 140°C, monolayer per cycle condition extended over wide range DMHg flux. growth carried out temperature (250–290°C) reactant partial pressure. layers also grown by alternately depositing onto substrates then interdiffusing them higher temperatures.
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