In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides
作者： Kjell Knapas , Timo Hatanpää , Mikko Ritala , Markku Leskelä
DOI: 10.1021/CM902180D
关键词:
摘要: Reaction mechanisms in the atomic layer deposition (ALD) of Sb2Te3 from SbCl3 and (Et3Si)2Te at 60 °C GeTe GeCl2·C4H8O2 (1,4-dioxane complex GeCl2) 90 were studied situ with a quadrupole mass spectrometer (QMS) quartz crystal microbalance (QCM). Also some experiments conducted on reactions ALD phase change material GST (germanium antimony telluride, Ge2Sb2Te5). The byproduct both binary telluride processes was found to be Et3SiCl, about 78% (36%) it released during (GeCl2·C4H8O2) pulse. Obviously −Te(SiEt3) surface groups serve as reactive sites for metal precursors, cf. −OH oxide that use water oxygen source. dioxane, other hand, expectedly entirely When depositing mechanism SbCl3-(Et3Si)2Te reaction so only 50% Et3SiCl SbC...
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