作者: J.T Sadowski , M.A Herman
DOI: 10.1016/S0169-4332(96)01002-1
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摘要: Abstract Simultaneous reflection mass spectrometry (REMS) and high energy electron diffraction (RHEED) measurements of the surface kinetic structural parameters, respectively, governing UHV ALE growth ZnTe CdZnTe films are reported. Two sets experiments have been performed. In first one we deposited several layers with different Zn/Te flux ratios, timing cycles temperatures. The REMS signals for Zn+ cations during deposition `dead' times cycle were measured; RHEED patterns also recorded to control smoothness epilayer. second part our a set was grown by ALE. During growth, measured both Cd+ cations. An interesting phenomenon is observed in signal behavior ZnTe. certain conditions, increases presence Te2 molecules on growing layer, probably due partial reevaporation chemisorbed layer Zn. Similar Cd0.5Zn0.5Te layer. However, this case no changes can be seen when Te cell opened.